t4 - lds -0 295 , rev . 1 (1 3 0278 ) ?201 3 microsemi corporation page 1 of 5 1n4942 C 1n 4946 available on commercial versions v oidless h ermetically s ealed f ast r ecovery g lass r ectifiers qualified per mil -prf- 19500/359 qualified levels : jan, jantx, and jantxv descripti on this series of industry recognized voidless , hermetically sealed f ast recovery glass rectifiers are military qualified to mil - prf - 19500/359 and are ideal for high - reliability applications where a failure cannot be tolerated. they provide a w orking pe ak reverse voltage se le ction from 200 to 600 volts with a 1.0 amp current rating. they are very robust in hard - glass construction and also use an internal metallurgical bond identified as " category 1" for high - reliability applications. these devices are sim ilar in ratings to the 1n5615 thr ough 1n5619 series where surface mount melf package configurations are also available by adding a us suf fix (see separate data sheet s ). a package important: for the latest information, visit our website http://www.microsemi.com . features ? popular jedec registered 1n4942 thr ough 1n494 6 number series. ? voidless hermetically sealed glass package. ? triple -l ayer p assi v ation. ? internal category 1 metallu rgical bonds . ? working peak reverse voltage 200 to 6 00 volts. ? jan, jantx, and jantxv qualifi cations are avail a ble per mil - prf - 19500/359 . ? rohs compliant versions available (commercial grade only) . applications / benefits ? fast recovery 1 a mp rectifiers 200 to 6 00 v . ? military and other high reliability applications . ? general rectifier applications including bridges, half - bridges, catch diodes, etc. ? high forward surge current capability . ? extremely robust const r uction . ? low thermal construction . ? controlled a vala nche with peak power capability . ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings @ t a = 25 o c unless otherwise specified msc C law re nce 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, enni s, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junct ion and storage temp erature t j and t stg - 65 to +175 o c thermal resistance junction - to - lead (l ead length = .375 in) also see figure 1 r ? jl 38 o c /w thermal resist ance @ 10 ms heating time r ? jx 115 oc /w average rectified forward current @ t a = + 55c @ t a = + 100c i o 1.0 (1) (2) 0.750 (2) amps working peak reverse voltage 1n4942 1n4944 1n4946 v rw m 200 400 600 v maximum forward surge current @ tp = 8.3 ms , i o = .750 a, t a = +55 oc i fs m 15 amps solder temperature @ 10 s t sp 260 o c notes : 1. derate linearly from 1.0 a at t a = +55 c to 0.75 a at +100 c. derate linearly from 0.75 a to 0 a between +100 c and +175 c. 2. for the 1 amp rating at 55 c ambient or 0.75 amp rating at 100 c ambient, these i o ratin gs are for thermal (pc boards or other) mounting methods where thermal resistance f rom mounting point to ambient is still sufficiently controlled where t j( ma x) in 1.3 is not exceeded. this equates to rjx 115 oc/w as s ho wn. downloaded from: http:///
t4 - lds -0 295 , rev . 1 (1 3 0278 ) ?201 3 microsemi corporation page 2 of 5 1n4942 C 1n 4946 mechanical a nd packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs. ? terminal s: tin/ l ead or rohs compliant matte/ t in (commercial grade only) over ni ckel plate over c opper. ? marking: body painted with part number . ? polarity: cathode indicated by band. ? tape & reel option: standard per eia - 296. consult factory for quantities. ? w eight: approximately 340 milligrams. ? see p ackage d imensions on last page. part nomenclature jan 1n4942 (e3) reliability l evel jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant jedec type number (see el ectrical characteristics table) symbols & definitions symbol definition c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified decay point after a peak reverse current occur s. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified curr ent. v (br) minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v rw m working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage . electrical cha racteristics type maximum forward voltage v fm @ i fm = 1a minimum breakdown voltage v (br) maximum reverse current i r @ v rwm maximum junction cap acit ance c j @ v r = 12 v maximum reverse recovery (note 2) t rr volts volts a pf ns 25c 150c 25c 150 c 1n4942 1n4944 1n4946 0.6 C 1.3 0.6 C 1.3 0.6 C 1.3 0.6 C 1.5 0.6 C 1.5 0.6 C 1.5 220 440 660 1.0 1.0 1.0 200 200 200 45 35 25 150 150 250 note 1 : t a = 100 c, 8.3 ms surges n ote 2: i f = 0.5 a, i rm = 1 a, i r(rec) = 0.250 a downloaded from: http:///
t4 - lds -0 295 , rev . 1 (1 3 0278 ) ?201 3 microsemi corporation page 3 of 5 1n4942 C 1n 4946 graphs heating time (sec) figure 1 maximum thermal impedance i o (a) figure 2 rectifier p ower vs i o (a verage f orward c urrent ) theta ( o c/w ) p o (w) downloaded from: http:///
t4 - lds -0 295 , rev . 1 (1 3 0278 ) ?201 3 microsemi corporation page 4 of 5 1n4942 C 1n 4946 graphs (continued) pad area (sq in) figure 3 thermal resistance vs fr4 pad area at ambient pcb horizontal (for each pad) with 1, 2, and 3 oz copper v f (v) figure 4 forward v oltage vs f orward c urrent i f (v) thermal resistance ( o c/w ) downloaded from: http:///
t4 - lds -0 295 , rev . 1 (1 3 0278 ) ?201 3 microsemi corporation page 5 of 5 1n4942 C 1n 4946 package dimensions notes: 1. dimensions are in inches. 2. millimeters equivalents are given for general information only. 3. dimension bd shall be measured at the largest diameter . 4. dimensi on bl shall include the entire body including slugs and sections of the lead over which the diameter is uncontrolled. this uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inch millimeters notes min max min max bd 0 .065 0. 150 1.65 3.81 3, 4 bl 0.140 0 .250 3.56 6.35 4 ld 0 .027 0.033 0.69 0.84 ll 1.00 1.50 25.4 38. 1 downloaded from: http:///
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